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Contact info: dr. Augustinas Galeckas |
Augustinas Galeckas was born in Vilnius,
Lithuania, in 1960.
He has graduated from Vilnius University with diploma of Physicist and Physics
teacher in 1984 and started research work in the field of ultra-fast phenomena
in semiconductors at Vilnius University’s research laboratory.
Since then, he took positions as an Engineer and Research assistant at the
Division of Picosecond Photonics.
In 1995, he received the Ph.D. degree in Physics from Vilnius University.
Currently, he holds position of Research Fellow at the Institute of Material
Research and Applied Sciences, Vilnius University.
In 1993, he has participated in EU Scientist Mobility Program as a Visiting
Scholar at Jena University, Germany.
Since 1996, he is within the Royal Institute of Technology, Stockholm, Sweden,
as a Post-Doctoral-Fellow and Senior Researcher.
He has authored more than 30 articles and over 40 conference contributions.
His specialties include studies of nonequilibrium processes and near-to-surface
properties of group IV semiconductors, layered and reduced-dimension structures
applying techniques of transient reflectometry, absorption and surface
second-harmonic-generation.
Field of scientific
studies :
Current research interests -
optical characterization of Si nano-structures, SiC related materials and
devices.
Some publications :
A. Galeckas, J. Linnros, and B. Breitholtz
“Time-resolved imaging of radiative recombination in 4H-SiC pin diode" Applied
Physics Letters, 74, 22, 3398-3400 (1999).
A. Galeckas, V. Grivickas, J. Linnros, “Auger recombination rate in 4H-SiC: Unusual temperature behavior”, Appl. Phys. Lett. 71 (22), 3269 (1997).
A. Galeckas, J. Linnros, M. Frischholz, K. Rottner, N. Nordell, S. Karlsson and V. Grivickas, "Investigation Of Surface Recombination And Carrier Lifetime In 4H/6H-SiC", Materials Science and Engineering B61-62, 239-243 (1999).
A. Galeckas, V. Grivickas, J. Linnros, H. Bleichner and C. Hallin, "Free carrier absorption and lifetime mapping in 4H-SiC epilayers", J. Appl. Phys., 81, 3522-3525, 1997.
A. Galeckas, O. Tornblad, J. Linnros, and B. Breitholtz, "Direct observation of excess carrier distribution in 4H-SiC power diodes", IEEE Electron Device Letters, 20, 6 (1999).
Last updated: 20.02.2002
