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Contact info: prof., hab.dr.
Artūras Žukauskas |
Artūras Žukauskas was born in Vilnius, Lithuania,
in 1956.
At Vilnius University, he received the diploma of Physicist and Physics Teacher
(1979).
He received a PhD (candidate) degree in
semiconductors and dielectrics (Heating of nonequilibrium carriers and excitons
in highly excited group II-VI compound crystals, 1983) and a habilitation
doctorate in natural sciences (Kinetics of nonthermalized electron-phonon system
in highly excited direct-gap semiconductors, 1991), both from Vilnius
University.
Then he continued
working at Vilnius University in Luminescence research laboratory on carrier
recombination and energy relaxation in semiconductor materials.
Žukauskas is chief research worker and
head of Laboratory of Luminescence at the Institute of Materials Science and
Applied Research within Vilnius University, and is also a professor in the
Department of Semiconductor Physics at the university.
He is an expert member of the Lithuanian Academy of Science.
Prof. Žukauskas has authored one book, about 100 papers and about 90 presentations in conferences.
In 2000-2001, he was a visiting scientist at Rensselaer Polytechnic Institute (RPI) in Troy, N.Y. (USA).
Field of scientific studies :
Currently, his research
group is engaged in fundamental investigations of carrier relaxation and
recombination in highly photoexcited direct-gap semiconductors, optical
characterization of materials for optoelectronics (mostly AlInGaN systems), and
applications of solid-state lamps.
Some recent publications :
A. Žukauskas,
Second nonequilibrium-phonon bottleneck for carrier cooling in highly excited
polar semiconductors,
Phys. Rev. B 57 (24), 15337-15344 (1998).
S. Juršėnas, G. Kurilčik, and A. Žukauskas,
Dense electron-hole plasma cooling due to second nonequilibrium-phonon
bottleneck in CdS crystallites,
Phys. Rev. B 58 (17), 12937-12943 (1998).
G. Tamulaitis, A. Žukauskas, J. W. Yang, M. A. Khan, M. S.
Shur, and R. Gaska,
Heating of photogenerated electrons and holes in highly excited GaN epilayers,
Appl. Phys. Lett. 75 (15), 2277-2279 (1999).
M. A. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur,
H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and
R. Bicknell-Tassius,
Lattice and energy band engineering in AlInGaN/GaN heterostructures,
Appl. Phys. Lett. 76 (9), 1161-1163 (2000).
S. Juršėnas, G. Kurilčik, G. Tamulaitis, A. Žukauskas, R.
Gaska, M. S. Shur, M. A. Khan, and J. W. Yang,
Dynamic behavior of hot-electron-hole plasma in highly excited GaN epilayers,
Appl. Phys. Lett. 76 (17), 2388-2390 (2000).
G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas,
M. A. Khan, J. W. Yang, J. Zhang, G. Simin, and R. Gaska,
Optical bandgap formation in AlInGaN alloys,
Appl. Phys. Lett. 77 (14), 2136-2138 (2000).
S. Juršėnas, N. Kurilčik, G. Kurilčik,
A. Žukauskas, P. Prystawko, M. Leszczynski, T. Suski, P. Perlin, I. Grzegory,
and S. Porowski,
Decay of stimulated and spontaneous emission in highly excited homoepitaxial
GaN,
Appl. Phys. Lett. 78 (24), 3776-3778 (2001).
A. Žukauskas, R. Gaska, and M. S. Shur,
Light emitting diodes: Progress in solid-state lighting,
MRS Bull. 26 (10), 764-769 (2001).
A. Žukauskas, R. Vaicekauskas, F. Ivanauskas, R. Gaska,
and M. S. Shur,
Optimization of white polychromatic semiconductor lamps,
Appl. Phys. Lett. 80 (2), 234-236 (2002).
A. Žukauskas, M.S. Shur, and R. Gaska,
Introduction to Solid-State Lighting
(Wiley, New York, 2002), 220 p. (ISBN 0471215740).
Last updated: 30.04.2003
