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Contact info: doc., dr.
Egidijus Vanagas |
Egidijus Vanagas was born in Vilnius, Lithuania,
in 1960.
He received the diploma of Physicist, Physics Teacher at Vilnius University in
1984
and the PhD degree in Physics (Dynamics of optical nonlinearities in low
dimension structures of compound II-VI, IV-IV semiconductors, 1997), also at
Vilnius University.
After PhD he continued scientific activities in Picosecond photonics sector at
Institute of Material Research and Applied Sciences of Vilnius University. Dr.
E.Vanagas was working on the projects in collaboration with scientific groups
from Linköping University (Sweden), Ecole Polytechnique Fédérale de Lausanne
(Switzerland), Institut de Physique et Chimie des Matériaux de Strasbourg,
Université Claude Bernard Lyon I (France).
Dr. E.Vanagas has authored 12 papers and about 20 presentations in conferences.
Field of scientific studies :
His current research interests is
in low dimension semiconductor structures: investigation of non-linear optical
properties, relaxation, recombination and transport processes.
Some publications :
R.Tomasiunas, E.Vanagas, M.Petrauskas, A.Þindulis,
M.Willander, Q.Wahab, H.Bergner. Fast recombination of excess carrier in 6H-SiC.
In “Diamond, SiC and nitride wide-bandgap semiconductors” Ed. by C.H.Carter J.
et al, MRS Proceedings 339, 699 (1994).
S.Juodkazis, E.Vanagas, V.Netiksis, M.Petrauskas, V.I.Utenko, V.I.Hitko, V.A.Bykovsky, Mapping of GaAs wafers by IR light diffraction and luminescence, Materials Science & Engineering, B28, pp.448-451, 1994.
E.Vanagas, J.Moniatte, M.Mazilu, P.Riblet, B.Hönerlage, S.Juodkazis, F.Paille, J.C.Plenet, J.G.Dumas, M.Petrauskas, J.Vaitkus, Dynamics of optical nonlinearities induced by strong light illumination in CdS nanocrystallites, Journal of Applied Physics, 81 (8), pp.3586-3591, 1997.
A.Galeckas, S.Juodkazis, E.Vanagas, V.Netiksis, M.Petrauskas, A.Bitz, J.L.Staehli, M.Willander, Lateral and cross-well transport of highly and moderately excited carriers in Si1-xGex/Si superlattices, Journal of Applied Physics, 83 (9), pp.4756-4759, 1998.
Last updated: 20.02.2002
