homemembersR.Tomašiūnas

	Rolandas Tomašiūnas
Contact info: doc., dr. Rolandas Tomašiūnas Vilnius University Vilnius, Lithuania Phone:+ 827 76 95 03 Fax: Email: rolandas.tomasiunas@ff.vu.lt WEB: www.ltmrs.lt/members/r_tomasiunas

Rolandas Tomašiūnas was born in Klaipėda, Lithuania, in 1958.
He received the diploma of Physicist, Physics Teacher at Vilnius University in 1981
and the PhD degree in Physics (Charge carrier recombination in highly excited amorphous and polycrystalline semiconductors, 1990), also at Vilnius University. Then, he continued working at Materials research laboratory of Vilnius University on various projects, basically, on investigations of low-dimension semiconductor materials.
While presently he is leading the Picosecond photonics sector at Institute of Material Research and Applied Sciences of Vilnius University.
Just two-three years after his PhD Dr. R.Tomašiūnas was working on scientific projects in collaboration with prof. M.Willander from Linköping University (Sweden). After post-doc studies at the Strasbourg University his group has close collaboration with scientific groups from Prague (Institute of Physics), Lyon (l’Universite Claude Bernard Lyon-I) and Strasbourg (IPCMS, GONLO) universities.
There are also scientific relations with prof. H.Misawa group from Tokushima university (Japan).
Dr. R.Tomašiūnas has authored more than 40 papers and about 20 presentations in conferences.

 Field of scientific studies :
His current research interests are carrier recombination, transport and optical aspects of low-dimensional semiconductor structures, also, physics of photonic crystals.

 Some publications :
R.Tomasiunas, E.Vanagas, M.Petrauskas, A.Žindulis, M.Willander, Q.Wahab, H.Bergner.
Fast recombination of excess carrier in 6H-SiC.
In “Diamond, SiC and nitride wide-bandgap semiconductors” Ed. by C.H.Carter J. et al, MRS Proceedings 339, 699 (1994).

R.Tomasiunas, I.Pelant, J.Kocka, J.B.Grun, B.Hönerlage.
Carrier diffusion in porous silicon studied by transient laser-induced grating spectroscopy.
J.Appl. Phys. 79(5), 2481 (1996).

R.Tomasiunas, J.Moniatte, I.Pelant, P.Gilliot, B.Hönerlage.
Femtosecond dephasing in porous silicon.
Appl.Phys.Lett. 68(23), 3296 (1996).

R.Tomasiunas, I.Pelant, B.Hönerlage, R.Lévy, T.Cloitre, R.L.Aulombard,
Stimulated emission and optical gain in a single MOVPE-grown Zn_xCd_1-xSe-ZnSe quantum well.
Phys. Rev. B, 57(20), 13077 (1998).

I.Mikulskas, K.Luterova, R.Tomasiunas, B.Hönerlage, T.Cloitre, R.L.Aulombard.
Light amplification due to free and localized exciton states in ZnCdSe GRINSCH structures.
Appl. Phys. A 67, 121 (1998).

Last updated: 22.02.2002