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Contact info: dr. Vitalijus Bikbajevas |
Vitalijus Bikbajevas was born in Vilnius,
Lithuania, in 1953.
He received the diploma in Physics from Vilnius University in 1975
and the Ph.D. degree in Physics (Study of the influence of polycrystalline
Cadmium and Lead Chalcogenide barrier structures inhomogeneities on their
electrical properties) in 1978 also from Vilnius University.
Then he continued working at Vilnius University
in research laboratories on contact phenomena and space-charge spectroscopy (DLTS)
in semiconductors, while presently he is a researcher at Institute of Material
Research and Applied Sciences of Vilnius University.
In nineties Dr. Bikbajevas was engaged in research at Royal Institute of
Technology, Stockholm, Sweden.
Dr. Bikbajevas has authored about 50 works.
Field of scientific
studies :
His current research interests
include carrier recombination and transport phenomena in Silicon.
Some publications :
V. Bikbaev, R. Pranaitis, S.Singh and J. Vaitkus
“DLTS study of electron traps in polycrystalline n-CdTe”, Phys. Stat. Sol. (a)
132 (1992) K39-K41.
M. Petrauskas, V. Bikbaev, R. Tomasiunas, M. Willander and Q. Wahab “Investigation of deep levels and carrier dynamics in SiC films”, Solid State Phenomena 32-33 (1993) 224-230.
V. Grivickas, G. Thungstrцm, V. Bikbajevas J. Linnros and D. Noreika “Characterization of Si wafer bonding by injection-dependent recombination velocity” Jpn. J. Appl. Phys. 34 (1995) L806-L809.
V. Grivickas, J. Linnros, A. Galeckas and V. Bikbajevas, “Relevance of the exciton effect on ambipolar transport and Auger recombination in silicon at room temperature”, in: Proc. 23d Int. Conf. Phys. Semicond. (World Scientific, Singapore) V. 1 (1996) 91-94.
V. Bikbajevas, V. Grivickas, J. Linnros and J. A. Tellefsen, “Injection-level dependent surface recombination velocities at the Si-SiO2 interface”, Physica Scripta T79 (1999) 322-326.
Last updated: 20.02.2002
